Electrical analysis of single-walled carbon nanotube as gigahertz on-chip interconnects

Zamshed Iqbal CHOWDHURY; Md. Istiaque RAHAMAN; M. Shamim KAISER

doi:10.1631/FITEE.1500349

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Electrical analysis of single-walled carbon nanotube as gigahertz on-chip interconnects

Regular Papers | Updated：2022-05-19

- Electrical analysis of single-walled carbon nanotube as gigahertz on-chip interconnects
- 千兆赫片上互联单壁纳米碳管电分析
- Frontiers of Information Technology & Electronic Engineering Vol. 18, Issue 2, Pages: 262-271(2017)
- Affiliations：
  
  1Institute of Information Technology, Jahangirnagar University, Dhaka 1342, Bangladesh
  2Department of Electrical & Electronic Engineering, Ahsanullah University of Science & Technology, Dhaka 1208, Bangladesh
- Author bio：
  
  E-mail:zic@juniv.edu
  E-mail:mskaiser@juniv.edu
- Funds：
- DOI：10.1631/FITEE.1500349
  CLC： TN402
- Received：21 October 2015，
  
  Accepted：16 February 2016，
  
  Published：2017-02
- Accepted：
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Zamshed Iqbal CHOWDHURY, Md. Istiaque RAHAMAN, M. Shamim KAISER. Electrical analysis of single-walled carbon nanotube as gigahertz on-chip interconnects[J]. Frontiers of Information Technology & Electronic Engineering, 2017, 18(2): 262-271.
DOI：

Zamshed Iqbal CHOWDHURY, Md. Istiaque RAHAMAN, M. Shamim KAISER. Electrical analysis of single-walled carbon nanotube as gigahertz on-chip interconnects[J]. Frontiers of Information Technology & Electronic Engineering, 2017, 18(2): 262-271. DOI： 10.1631/FITEE.1500349.

摘要

在未来的高频系统芯片，特别是片上网络的设计中，知识产权模块之间的联系至为关键，而单壁纳米碳管则是其中一种很有前景的纳米结构。电路及系统尺寸的不断缩减限制了对1000 GHz级别高频信号特征的利用。本文针对不同结构构型的单壁纳米碳管，对高质量互联中四项重要的四项电参数--阻抗，传播常量，电流密度以及信号延时进行了推导。每个参数均表现出了对其设计互联频率范围和构型的强相关性。与现有理论和实验结果相比，本文所提出的模型在解决下一代高速集成电路互联问题上有其新颖性。

Abstract

The single-walled carbon nanotube (SWCNT) is a promising nanostructure in the design of future highfrequency system-on-chip

especially in network-on-chip

where the quality of communication between intellectual property (IP) modules is a major concern. Shrinking dimensions of circuits and systems have restricted the use of high-frequency signal characteristics for frequencies up to 1000 GHz. Four key electrical parameters

impedance

propagation constant

current density

and signal delay time

which are crucial in the design of a high-quality interconnect

are derived for different structural configurations of SWCNT. Each of these parameters exhibits strong dependence on the frequency range over which the interconnect is designed to operate

as well as on the configuration of SWCNT. The novelty of the proposed model for solving next-generation high-speed integrated circuit (IC) interconnect challenges is illustrated

compared with existing theoretical and experimental results in the literature.

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references

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