Band-gap tunable (Ga<italic style="font-style: italic">x</italic>In1-<italic style="font-style: italic">x</italic>)2O3 layer grown by magnetron sputtering

Fabi ZHANG; inyu SUNJ; Haiou LI; Juan ZHOU; Rong WANG; Tangyou SUN; Tao FU; Gongli XIAO; Qi LI; Xingpeng LIU; Xiuyun ZHANG; Daoyou GUO; Xianghu WANG; Zujun QIN

doi:10.1631/FITEE.2000330

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Band-gap tunable (Ga_xIn_1-x)₂O₃ layer grown by magnetron sputtering

Regular Papers | Updated：2022-06-06

- Band-gap tunable (Ga_xIn_1-x)₂O₃ layer grown by magnetron sputtering
- 磁控溅射法生长的带隙可调谐(Ga_xIn₁₋_x)₂O₃
- Frontiers of Information Technology & Electronic Engineering Vol. 22, Issue 10, Pages: 1370-1378(2021)
- Affiliations：
  
  Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China
  Center for Optoelectronics Materials and Devices & Key Laboratory of Optical Field Manipulation of Zhejiang Province, Zhejiang Sci-Tech University, Hangzhou 310018, China
  School of Mechanical Engineering, Shanghai Dianji University, Shanghai 200245, China
- Author bio：
  
  [ "Fabi ZHANG, E-mail: zhangfabi@outlook.com" ]
  Zujun QIN, E-mail: qinzj@guet.edu.cn
- Funds：
- DOI：10.1631/FITEE.2000330
  CLC： TN304
- Received：08 July 2020，
  
  Revised：2021-;9-;2，
  
  Published：2021-10
- Accepted：
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Fabi ZHANG, inyu SUNJ, Haiou LI, et al. Band-gap tunable (Ga_xIn_1-x)₂O₃ layer grown by magnetron sputtering[J]. Frontiers of Information Technology & Electronic Engineering, 2021, 22(10): 1370-1378.
DOI：

Fabi ZHANG, inyu SUNJ, Haiou LI, et al. Band-gap tunable (Ga_xIn_1-x)₂O₃ layer grown by magnetron sputtering[J]. Frontiers of Information Technology & Electronic Engineering, 2021, 22(10): 1370-1378. DOI： 10.1631/FITEE.2000330.

摘要

采用磁控溅射技术和热退火技术在(0001)蓝宝石衬底上制备了多组分氧化物(Ga

1−

)

薄膜，实现可调带隙。详细研究了三元化合物(Ga

1−

)

在整个组成范围内的光学性质和能带结构演化。X射线衍射谱表明，Ga含量在0.11至0.55之间的(Ga

1−

)

薄膜既有立方结构，也有单斜结构，而Ga含量高于0.74的(Ga

)

薄膜只有单斜结构。在可见光范围，所有薄膜透光率均高于86%，吸收边清晰，条纹清晰。此外，随着Ga含量增加，紫外吸收边出现380至250 nm的蓝移，表明禁带能从3.61 eV增加至4.64 eV。实验结果为透明导电化合物半导体(Ga

1−

)

薄膜在光电和光伏行业的应用，特别是在显示器、发光二极管和太阳能电池的应用奠定了基础。

Abstract

Multicomponent oxide (Ga

)

films are prepared on (0001) sapphire substrates to realize a tunable band-gap by magnetron sputtering technology followed by thermal annealing. The optical properties and band structure evolution over the whole range of compositions in ternary compounds (Ga

)

are investigated in detail. The X-ray diffraction spectra clearly indicate that (Ga

)

films with Ga content varying from 0.11 to 0.55 have both cubic and monoclinic structures

and that for films with Ga content higher than 0.74

only the monoclinic structure appears. The transmittance of all films is greater than 86% in the visible range with sharp absorption edges and clear fringes. In addition

a blue shift of ultraviolet absorption edges from 380 to 250 nm is noted with increasing Ga content

indicating increasing band-gap energy from 3.61 to 4.64 eV. The experimental results lay a foundation for the application of transparent conductive compound (Ga

)

thin films in photoelectric and photovoltaic industry

especially in display

light-emitting diode

and solar cell applications.

关键词

Keywords

references

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⁰

Band-gap tunable (GaxIn1-x)2O3 layer grown by magnetron sputtering

DOI：10.1631/FITEE.2000330

摘要

Abstract

关键词

Keywords

references

Band-gap tunable (Ga_xIn_1-x)₂O₃ layer grown by magnetron sputtering