Design and optimization of a gate-controlled dual direction electro-static discharge device for an industry-level fluorescent optical fiber temperature sensor

Yang WANG; Xiangliang JIN; Jian YANG; Feng YAN; Yujie LIU; Yan PENG; Jun LUO; Jun YANG

doi:10.1631/FITEE.2000504

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Design and optimization of a gate-controlled dual direction electro-static discharge device for an industry-level fluorescent optical fiber temperature sensor

Regular Papers | Updated：2022-04-19

- Design and optimization of a gate-controlled dual direction electro-static discharge device for an industry-level fluorescent optical fiber temperature sensor
  Enhanced Publication
- 一种用于工业级荧光光纤温度传感器的栅控双向静电放电器件的设计与优化
- Frontiers of Information Technology & Electronic Engineering Vol. 23, Issue 1, Pages: 158-170(2022)
- Affiliations：
  
  1.School of Physics and Electronics, Hunan Normal University, Changsha410081, China
  2.School of Mechatronic Engineering and Automation, Shanghai University, Shanghai200444, China
  3.Faculty of Engineering, Western University, London, ONN6A 3K7, Canada
- Author bio：
  
  ‡Corresponding authors
- Funds：
- DOI：10.1631/FITEE.2000504
  CLC： TN40;O441.1
- Received：27 September 2020，
  
  Accepted：07 January 2021，
  
  Published：0 January 2022
- Accepted：
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Yang WANG, Xiangliang JIN, Jian YANG, et al. Design and optimization of a gate-controlled dual direction electro-static discharge device for an industry-level fluorescent optical fiber temperature sensor[J]. Frontiers of Information Technology & Electronic Engineering, 2022, 23(1): 158-170.
DOI：

Yang WANG, Xiangliang JIN, Jian YANG, et al. Design and optimization of a gate-controlled dual direction electro-static discharge device for an industry-level fluorescent optical fiber temperature sensor[J]. Frontiers of Information Technology & Electronic Engineering, 2022, 23(1): 158-170. DOI： 10.1631/FITEE.2000504.

摘要

工业级荧光光纤温度传感器读出电路的I/O引脚需要片上集成高性能静电放电（ESD）保护器件。采用0.18 μm标准BCD工艺制造的基本N型埋层栅控可控硅（NBL-GCSCR）失效等级难以满足需求。因此，基于相同半导体工艺，提出片上集成新型高失效等级深N阱栅控可控硅（DNW-GCSCR）以有效解决上述问题。采用技术计算机辅助设计（TCAD）仿真分析器件特性。可控硅通过传输线脉冲（TLP）进行测试，以获得准确ESD参数。具有纵向双极晶体管（BJT）路径的NBL-GCSCR维持电压（24.03 V）明显高于具有相同尺寸横向可控硅路径的DNW-GCSCR维持电压（5.15 V）。NBL-GCSCR器件的失效电流为1.71 A，DNW-GCSCR器件的失效电流为20.99 A。当DNW-GCSCR栅极尺寸从2 μm增加到6 μm时，维持电压为从3.50 V增加到8.38 V。优化后的DNW-GCSCR（栅极尺寸6 μm）可以稳定应用于目标读出电路的片上静电放电保护。

Abstract

The input/output (I/O) pins of an industry-level fluorescent optical fiber temperature sensor readout circuit need on-chip integrated high-performance electro-static discharge (ESD) protection devices. It is difficult for the failure level of basic N-type buried layer gate-controlled silicon controlled rectifier (NBL-GCSCR) manufactured by the 0.18 μm standard bipolar- CMOS-DMOS (BCD) process to meet this need. Therefore

we propose an on-chip integrated novel deep N-well gate-controlled SCR (DNW-GCSCR) with a high failure level to effectively solve the problems based on the same semiconductor process. Technology computer-aided design (TCAD) simulation is used to analyze the device characteristics. SCRs are tested by transmission line pulses (TLP) to obtain accurate ESD parameters. The holding voltage (24.03 V) of NBL-GCSCR with the longitudinal bipolar junction transistor (BJT) path is significantly higher than the holding voltage (5.15 V) of DNW-GCSCR with the lateral SCR path of the same size. However

the failure current of the NBL-GCSCR device is 1.71 A

and the failure current of the DNW-GCSCR device is 20.99 A. When the gate size of DNW-GCSCR is increased from 2 μm to 6 μm

the holding voltage is increased from 3.50 V to 8.38 V. The optimized DNW-GCSCR (6 μm) can be stably applied on target readout circuits for on-chip electrostatic discharge protection.

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references

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