Research on electromagnetic interference resistance performance of three kinds of CMOS inverters
Regular Papers|Updated:2025-02-25
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Research on electromagnetic interference resistance performance of three kinds of CMOS inverters
Enhanced Publication
三种CMOS反相器抗电磁干扰性能研究
“In the field of electromagnetic interference (EMI) resistance of CMOS circuits, this paper investigates the performance of three NOT gate circuits. The study reveals that current-mode CMOS circuits exhibit superior EMI resistance at high operating frequencies and under different temperatures and processes, laying a foundation for the design of current-mode CMOS circuits against EMI.”
Frontiers of Information Technology & Electronic EngineeringVol. 25, Issue 10, Pages: 1390-1405(2024)
Affiliations:
College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
Fangjun LIU, Jiaming SHEN, Jizhong SHEN. Research on electromagnetic interference resistance performance of three kinds of CMOS inverters[J]. Frontiers of information technology & electronic engineering, 2024, 25(10): 1390-1405.
DOI:
Fangjun LIU, Jiaming SHEN, Jizhong SHEN. Research on electromagnetic interference resistance performance of three kinds of CMOS inverters[J]. Frontiers of information technology & electronic engineering, 2024, 25(10): 1390-1405. DOI: 10.1631/FITEE.2400264.
Research on electromagnetic interference resistance performance of three kinds of CMOS invertersEnhanced Publication