Scratch-concerned yield modeling for IC manufacturing involved with a chemical mechanical polishing process

Jiao-jiao ZHU; Xiao-hua LUO; Li-sheng CHEN; Yi YE; Xiao-lang YAN

doi:10.1631/jzus.C1100242

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Scratch-concerned yield modeling for IC manufacturing involved with a chemical mechanical polishing process

Electronic Engineering | Updated：2022-12-09

- Scratch-concerned yield modeling for IC manufacturing involved with a chemical mechanical polishing process
- Scratch-concerned yield modeling for IC manufacturing involved with a chemical mechanical polishing process
- Frontiers of Information Technology & Electronic Engineering Vol. 13, Issue 5, Pages: 376-384(2012)
- Affiliations：
  
  Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China
- Author bio：
  
  Xiao-hua LUO, E-mail: luoxh@vlsi.zju.edu.cn
- Funds：
- DOI：10.1631/jzus.C1100242
  CLC： TN4
- Received：22 August 2011，
  
  Revised：2012-;4-;9，
  
  Published：2012-05
- Accepted：
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Jiao-jiao ZHU, Xiao-hua LUO, Li-sheng CHEN, et al. Scratch-concerned yield modeling for IC manufacturing involved with a chemical mechanical polishing process[J]. Frontiers of Information Technology & Electronic Engineering, 2012, 13(5): 376-384.
DOI：

Jiao-jiao ZHU, Xiao-hua LUO, Li-sheng CHEN, et al. Scratch-concerned yield modeling for IC manufacturing involved with a chemical mechanical polishing process[J]. Frontiers of Information Technology & Electronic Engineering, 2012, 13(5): 376-384. DOI： 10.1631/jzus.C1100242.

摘要

Abstract

In existing integrated circuit (IC) fabrication methods

the yield is typically limited by defects generated in the manufacturing process. In fact

the yield often shows a good correlation with the type and density of the defect. As a result

an accurate defect limited yield model is essential for accurate correlation analysis and yield prediction. Since real defects exhibit a great variety of shapes

to ensure the accuracy of yield prediction

it is necessary to select the most appropriate defect model and to extract the critical area based on the defect model. Considering the realistic outline of scratches introduced by the chemical mechanical polishing (CMP) process

we propose a novel scratch-concerned yield model. A linear model is introduced to model scratches. Based on the linear model

the related critical area extraction algorithm and defect density distribution are discussed. Owing to higher correspondence with the realistic outline of scratches

the linear defect model enables a more accurate yield prediction caused by scratches and results in a more accurate total product yield prediction as compared to the traditional circular model.

关键词

Keywords

references

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