A low drift current reference based on PMOS temperature correction technology

Yi-die YE; Le-nian HE; Ya-dan SHEN

doi:10.1631/jzus.C1200112

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A low drift current reference based on PMOS temperature correction technology

Electronic Engineering | Updated：2022-05-19

- A low drift current reference based on PMOS temperature correction technology
- A low drift current reference based on PMOS temperature correction technology
- Frontiers of Information Technology & Electronic Engineering Vol. 13, Issue 12, Pages: 937-943(2012)
- Affiliations：
  
  Institute of Very Large Scale Integrated Circuits Design, Zhejiang University, Hangzhou 310027, China
- Author bio：
  
  [ "Yi-die YE, E-mail: yeyidie@nbu.edu.cn" ]
  Le-nian HE, E-mail:helenian@vlsi.zju.edu.cn
- Funds：
- DOI：10.1631/jzus.C1200112
  CLC： TN432
- Received：15 April 2012，
  
  Revised：2012-10-22，
  
  Published：2012-12
- Accepted：
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Yi-die YE, Le-nian HE, Ya-dan SHEN. A low drift current reference based on PMOS temperature correction technology[J]. Frontiers of Information Technology & Electronic Engineering, 2012, 13(12): 937-943.
DOI：

Yi-die YE, Le-nian HE, Ya-dan SHEN. A low drift current reference based on PMOS temperature correction technology[J]. Frontiers of Information Technology & Electronic Engineering, 2012, 13(12): 937-943. DOI： 10.1631/jzus.C1200112.

摘要

Abstract

A low drift current reference based on PMOS temperature correction technology is proposed. To achieve the mini mum temperature coefficient (TC)

the PMOS cascode current mirror is designed as a cross structure. By exchanging the bias for two layers of the self-biased PMOS cascode structure

the upper PMOS

which is used to adjust the TC together with the resistor of the self-biased PMOS cascode structure

is forced to work in the linear region. As the proposed current reference is the on-chip current reference of a high voltage LED driver with high accuracy

it was designed using a CSMC 1 μm 40 V BCD process. Simulation shows that the TC of the reference current was only 23.8×10

-6

/℃ over the temperature range of -40–120 ℃ under the typical condition.

关键词

Keywords

references

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