An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator

Li-heng LOU; Ling-ling SUN; Jun LIU; Hai-jun GAO

doi:10.1631/jzus.C1200268

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An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator

Electrical & Electronic Engineering | Updated：2022-05-19

- An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator
- An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator
- Frontiers of Information Technology & Electronic Engineering Vol. 14, Issue 3, Pages: 205-213(2013)
- Affiliations：
  
  1.Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China
  2.MOE Key Laboratory of RF Circuits and Systems, Hangzhou Dianzi University, Hangzhou 310018, China
- Author bio：
  
  [ "Li-heng LOU, E-mail: lynn_lo@163.com" ]
  Ling-ling SUN, E-mail: sunll@hdu.edu.cn
- Funds：
- DOI：10.1631/jzus.C1200268
  CLC： TN432
- Received：21 September 2012，
  
  Revised：2013-;2-25，
  
  Published：2013-03
- Accepted：
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Li-heng LOU, Ling-ling SUN, Jun LIU, et al. An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator[J]. Frontiers of Information Technology & Electronic Engineering, 2013, 14(3): 205-213.
DOI：

Li-heng LOU, Ling-ling SUN, Jun LIU, et al. An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator[J]. Frontiers of Information Technology & Electronic Engineering, 2013, 14(3): 205-213. DOI： 10.1631/jzus.C1200268.

摘要

Abstract

This paper proposes an efficient PSP-based model for cross-coupled metal-oxide-semiconductor field-effect transistors (MOSFETs) with optimized layout in the voltage controlled oscillator (VCO). The model employs a PSP charge model to characterize the bias-dependent extrinsic capacitance instead of numerical functions with strong non-linearity. The simulation convergence is greatly improved by this method. An original scheme is developed to extract the parameters of the PSP charge model based on

-parameters measurement. The interconnection parasitics of the cross-coupled MOSFETs are modeled based on vector fitting. The model is verified with an LC VCO design

and exhibits excellent convergence during simulation. The results show improvements as high as 60.5% and 61.8% in simulation efficiency and accuracy

respectively

indicating that the proposed model better characterizes optimized cross-coupled MOSFETs in advanced radio frequency (RF) circuit design.

关键词

Keywords

references

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