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Electrical characterization of integrated passive devices using thin film technology for 3D integration
- Electrical characterization of integrated passive devices using thin film technology for 3D integration
- Frontiers of Information Technology & Electronic Engineering Vol. 14, Issue 4, Pages: 235-243(2013)
- Affiliations：
1.National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Peking University, Beijing 100871, China
2.Department of Mechanical and Electrical Engineering, Xiamen University, Xiamen 361005, China
3.Information Microsystem Institute, Beijing Information Science and Technology University, Beijing 100085, China
- Author bio：
[ "SUN Xin, sunxin@ime.pku.edu.cn" ]
Yu-feng JIN, yfjin@pku.edu.cn
- Funds：
DOI：10.1631/jzus.C12MNT01
CLC： TN405Received：18 October 2012，
Revised：2013-;3-15，
Published：2013-04
- Accepted：
Scan QR Code
Xin SUN, Yun-hui ZHU, Zhen-hua LIU, et al. Electrical characterization of integrated passive devices using thin film technology for 3D integration[J]. Frontiers of Information Technology & Electronic Engineering, 2013, 14(4): 235-243.
Xin SUN, Yun-hui ZHU, Zhen-hua LIU, et al. Electrical characterization of integrated passive devices using thin film technology for 3D integration[J]. Frontiers of Information Technology & Electronic Engineering, 2013, 14(4): 235-243. DOI： 10.1631/jzus.C12MNT01.
摘要
Abstract
With the development of 3D integration technology
microsystems with vertical interconnects are attracting attention from researchers and industry applications. Basic elements of integrated passive devices (IPDs)
including inductors
capacitors
and resistors
could dramatically save the footprint of the system
optimize the form factor
and improve the performance of radio frequency (RF) systems. In this paper
IPDs using thin film built-up technology are introduced
and the design and characterization of coplanar waveguides (CPWs)
inductors
and capacitors are presented.
关键词
Keywords
references
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