Low temperature Si/Si wafer direct bonding using a plasma activated method

Dong-ling LI; Zheng-guo SHANG; Sheng-qiang WANG; Zhi-yu WEN

doi:10.1631/jzus.C12MNT02

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Low temperature Si/Si wafer direct bonding using a plasma activated method

Special Part-Issue for the Chinese Society of Micro-Nano Technology (CSMNT2012) | Updated：2022-12-09

- Low temperature Si/Si wafer direct bonding using a plasma activated method
- Low temperature Si/Si wafer direct bonding using a plasma activated method
- Frontiers of Information Technology & Electronic Engineering Vol. 14, Issue 4, Pages: 244-251(2013)
- Affiliations：
  
  1.National Key Laboratory of Fundamental Science of Novel Micro/Nano Device and System Technology, Chongqing University, Chongqing 400044, China
  2.MOE Key Laboratory of Optoelectronic Technology & Systems, Chongqing University, Chongqing 400044, China
  3.Microsystem Research Center, Chongqing University, Chongqing 400044, China
- Author bio：
  
  [ "LI Dong-ling, lidongling@cqu.edu.cn" ]
- Funds：
- DOI：10.1631/jzus.C12MNT02
  CLC： TN305.7
- Received：08 October 2012，
  
  Revised：2013-;3-13，
  
  Published：2013-04
- Accepted：
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Dong-ling LI, Zheng-guo SHANG, Sheng-qiang WANG, et al. Low temperature Si/Si wafer direct bonding using a plasma activated method[J]. Frontiers of Information Technology & Electronic Engineering, 2013, 14(4): 244-251.
DOI：

Dong-ling LI, Zheng-guo SHANG, Sheng-qiang WANG, et al. Low temperature Si/Si wafer direct bonding using a plasma activated method[J]. Frontiers of Information Technology & Electronic Engineering, 2013, 14(4): 244-251. DOI： 10.1631/jzus.C12MNT02.

摘要

Abstract

Manufacturing and integration of micro-electro-mechanical systems (MEMS) devices and integrated circuits (ICs) by wafer bonding often generate problems caused by thermal properties of materials. This paper presents a low temperature wafer direct bonding process assisted by O

plasma. Silicon wafers were treated with wet chemical cleaning and subsequently activated by O

plasma in the etch element of a sputtering system. Then

two wafers were brought into contact in the bonder followed by annealing in N

atmosphere for several hours. An infrared imaging system was used to detect bonding defects and a razor blade test was carried out to determine surface energy. The bonding yield reaches 90%–95% and the achieved surface energy is 1.76 J/m

when the bonded wafers are annealed at 350 ℃ in N

atmosphere for 2 h. Void formation was systematically observed and elimination methods were proposed. The size and density of voids greatly depend on the annealing temperature. Short O

plasma treatment for 60 s can alleviate void formation and enhance surface energy. A pulling test reveals that the bonding strength is more than 11.0 MPa. This low temperature wafer direct bonding process provides an efficient and reliable method for 3D integration

system on chip

and MEMS packaging.

关键词

Keywords

references

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