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High
Q , high frequency, high overtone bulk acoustic resonator with ZnO films- High
Q , high frequency, high overtone bulk acoustic resonator with ZnO films - Frontiers of Information Technology & Electronic Engineering Vol. 14, Issue 4, Pages: 279-282(2013)
- Affiliations：
State Key Laboratory of Acoustics, Institute of Acoustics, Chinese Academy of Sciences, Beijing 100190, China
- Author bio：
[ "LIU Meng-wei, E-mail: liumw@mail.ioa.ac.cn" ]
- Funds：
DOI：10.1631/jzus.C12MNT07
CLC： TN751Received：27 September 2012，
Revised：2013-;3-22，
Published：2013-04
- Accepted：
Scan QR Code
Meng-wei LIU, Ming-bo ZHU, Jun-hong LI, et al. High
Q , high frequency, high overtone bulk acoustic resonator with ZnO films[J]. Frontiers of Information Technology & Electronic Engineering, 2013, 14(4): 279-282.Meng-wei LIU, Ming-bo ZHU, Jun-hong LI, et al. High
Q , high frequency, high overtone bulk acoustic resonator with ZnO films[J]. Frontiers of Information Technology & Electronic Engineering, 2013, 14(4): 279-282. DOI： 10.1631/jzus.C12MNT07.
摘要
Abstract
Bulk acoustic wave resonators with piezoelectric films have been widely explored for the small size and high quality factor (
Q
) at GHz. This paper describes a high overtone bulk acoustic resonator (HBAR) based on Al/ZnO/Al sandwich layers and
c
-axis sapphire substrate. ZnO film with high quality
c
-axis orientation has been obtained using DC magnetron sputtering. The fabricated HBAR presents high
Q
at the multiple resonances from a 0.5–4.0 GHz wide band with a total size (including the contact pads) of 0.6 mm×0.3 mm×0.4 mm. The device exhibits the best acoustic coupling at around 2.4 GHz
which agrees with the simulation results based on the one-dimensional Mason equivalent circuit model. The HBAR also demonstrates
Q
values of 30 000
25 000
and 6500 at 1.49
2.43
and 3.40 GHz
respectively. It is indicated that the HBAR has potential applications for the low phase noise high frequency oscillator or microwave signal source.
关键词
Keywords
references
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