
FOLLOWUS
Peter Grünberg Research Center, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
School of Computer Engineering, Nanjing Institute of Technology, Nanjing 211167, China
Yong-jin WANG, E-mail: wangyj@njupt.edu.cn
收稿:2016-11-18,
修回:2017-;9-30,
纸质出版:2017-09
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蔡玮, 朱秉诚, 高绪敏, 等. 同质集成可见光互联芯片[J]. 信息与电子工程前沿(英文), 2017,18(9):1288-1294.
Wei CAI, Bing-cheng ZHU, Xu-min GAO, et al. On-chip optical interconnect using visible light[J]. Frontiers of Information Technology & Electronic Engineering, 2017, 18(9): 1288-1294.
蔡玮, 朱秉诚, 高绪敏, 等. 同质集成可见光互联芯片[J]. 信息与电子工程前沿(英文), 2017,18(9):1288-1294. DOI: 10.1631/FITEE.1601720.
Wei CAI, Bing-cheng ZHU, Xu-min GAO, et al. On-chip optical interconnect using visible light[J]. Frontiers of Information Technology & Electronic Engineering, 2017, 18(9): 1288-1294. DOI: 10.1631/FITEE.1601720.
本文采用晶圆级微纳加工技术,基于硅衬底氮化镓晶圆,提出并制备了同质集成发射极、集电极和基极的可见光互联芯片。利用InGaN/GaN量子阱二极管器件发光探测共存的特性,芯片的发射极和集电极采用相同的量子阱结构,并通过相同的制备工艺实现。发射极和集电极之间通过悬空的光波导连接,实现器件之间的光互联。同质集成可见光互联芯片集成两个共基极的光致晶体管,实现芯片内可见光的发射、传输和探测功能。该可见光互联芯片可以广泛应用于光致类脑神经形态芯片、芯片内可见光通信、智能显示、微纳成像及光传感等领域。
We propose and fabricate a monolithic optical interconnect on a GaN-on-silicon platform using a wafer-level technique. Because the InGaN/GaN multiple-quantum-well diodes (MQWDs) can achieve light emission and detection simultaneously
the emitter and collector sharing identical MQW structure are produced using the same process. Suspended waveguides interconnect the emitter with the collector to form in-plane light coupling. Monolithic optical interconnect chip integrates the emitter
waveguide
base
and collector into a multi-component system with a common base. Output states superposition and 1 × 2 in-plane light communication are experimentally demonstrated. The proposed monolithic optical interconnect opens a promising way toward the diverse applications from in-plane visible light communication to light-induced artificial synaptic devices
intelligent display
on-chip imaging
and optical sensing.
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