III-V/Si异质光子集成：组件及其特性

张尚剑; 刘永; 陆荣国; 孙豹; 闫连山

doi:10.1631/FITEE.1800482

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III-V/Si异质光子集成：组件及其特性

光电子器件与集成专题 | Updated：2022-05-19

- III-V/Si异质光子集成：组件及其特性
- Heterogeneous Ⅲ-Ⅴ silicon photonic integration: components and characterization
- 信息与电子工程前沿（英文） 2019年20卷第4期页码：472-480
- Affiliations：
  
  School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
  Center for Information Photonics and Communications, School of Information Science and Technology, Southwest Jiaotong University, Chengdu 610031, China
- Author bio：
  
  Shang-jian ZHANG, E-mail: sjzhang@uestc.edu.cn
  [ "Yong LIU, E-mail: yongliu@uestc.edu.cn" ]
- Funds：
  
  Project supported by the National Natural Science Foundation of China (Nos. 61875240, 61421002, and 61435010) and the Science Foundation for Youths of Sichuan Province, China (No. 2016JQ0014)
- DOI：10.1631/FITEE.1800482
  中图分类号： O439
- 收稿：2018-08-11，
  
  修回：2019-;4-11，
  
  纸质出版：2019-04
- Accepted：
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张尚剑, 刘永, 陆荣国, 等. III-V/Si异质光子集成：组件及其特性[J]. 信息与电子工程前沿（英文）, 2019,20(4):472-480.

Shang-jian ZHANG, Yong LIU, Rong-guo LU, et al. Heterogeneous Ⅲ-Ⅴ silicon photonic integration: components and characterization[J]. Frontiers of Information Technology & Electronic Engineering, 2019, 20(4): 472-480.
张尚剑, 刘永, 陆荣国, 等. III-V/Si异质光子集成：组件及其特性[J]. 信息与电子工程前沿（英文）, 2019,20(4):472-480. DOI： 10.1631/FITEE.1800482.

Shang-jian ZHANG, Yong LIU, Rong-guo LU, et al. Heterogeneous Ⅲ-Ⅴ silicon photonic integration: components and characterization[J]. Frontiers of Information Technology & Electronic Engineering, 2019, 20(4): 472-480. DOI： 10.1631/FITEE.1800482.

摘要

III-V/Si异质光子集成被视为实现能源效率和成本效率的光互连关键技术之一，在未来高性能计算机和数据中心有极大潜力。本文综述了包括收发器件和组件的III-V/Si异质光子集成的最新研究进展，并报告了在光子集成回路，特别是异质集成平台上实现光子集成回路的晶圆级测试分析进展。

Abstract

Heterogeneous Ⅲ-Ⅴ silicon (Si) photonic integration is considered one of the key methods for realizing power-and cost-effective optical interconnections

which are highly desired for future high-performance computers and datacenters. We review the recent progress in heterogeneous Ⅲ-Ⅴ/Si photonic integration

including transceiving devices and components. We also describe the progress in the on-wafer characterization of photonic integration circuits

especially on the heterogeneous Ⅲ-Ⅴ/Si platform.

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references

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