余弦忆导忆阻系统周期变化初值位移调控行为

陈墨; 任雪; 武花干; 徐权; 包伯成

doi:10.1631/FITEE.1900360

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余弦忆导忆阻系统周期变化初值位移调控行为

常规文章 | Updated：2022-05-19

- 余弦忆导忆阻系统周期变化初值位移调控行为
- Periodically varied initial offset boosting behaviors in a memristive system with cosine memductance
- 信息与电子工程前沿（英文） 2019年20卷第12期页码：1706-1716
- Affiliations：
  
  School of Information Science and Engineering, Changzhou University, Changzhou 213164, China
- Author bio：
  
  [ "", "Mo CHEN, first author of this invited paper, is an associate professor at the School of Information Science and Engineering, Changzhou University, China. Her research interests focus mainly on bifurcation and chaos, analysis and simulation of neuromorphic circuits, and nonlinear circuits and systems. She is a key member of the \"Memristor Circuit and Intelligent Network (MCIN)\" group and this group won the 2019 Excellent Scientific and Technological Innovation Team of Jiangsu Province, China.CHEN received BS degree in information engineering in 2003, and MS and PhD degrees in electromagnetic field and microwave technology in 2006 and 2009, respectively, all from Southeast University, China. She is the author (co-author) of 50 journal papers indexed by the Web of Science. She won the \"IET Premium Awards 2018.\", E-mail: mchen@cczu.edu.cn" ]
  [ "", "Bo-cheng BAO, corresponding author of this invited paper, is a full professor at the School of Information Science and Engineering, Changzhou University, Changzhou, China. His current research interests include on bifurcation and chaos, analysis and simulation of neuromorphic circuits, power electronic circuits, and nonlinear circuits and systems. He is the team leader of the \"Memristor Circuit and Intelligent Network (MCIN)\"group, and his group won the 2019 Excellent Scientific and Technological Innovation Team of Jiangsu Province, China. BAO received BS and MS degrees in electronic engineering from the University of Electronics Science and Technology of China, in 1986 and 1989, respectively. He obtained a PhD degree from the Department of Electronic Engineering, Nanjing University of Science and Technology, China, in 2010. He has more than 20 years' experiences in industry and worked in several enterprises as Senior Engineer or General Manager. From June 2008 to January 2011, he was a professor at the School of Electrical and Information Engineering, Jiangsu University of Technology, China. From June 2013 to December 2013, he visited the Department of Electrical and Computer Engineering, University of Calgary, Calgary, AB, Canada. He has authored (co-authored) three academic monographs and more than 160 journal papers indexed by the Web of Science. He won the \"IET Premium Awards 2018.\"" ]
- Funds：
  
  Project supported by the National Natural Science Foundation of China (Nos. 61601062, 51777016, 51607013, and 61801054) and the Natural Science Foundation of Jiangsu Province, China (No. BK20191451)
- DOI：10.1631/FITEE.1900360
  中图分类号： O415
- 收稿：2019-07-19，
  
  修回：2019-12-;3，
  
  纸质出版：2019-12
- Accepted：
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陈墨, 任雪, 武花干, 等. 余弦忆导忆阻系统周期变化初值位移调控行为[J]. 信息与电子工程前沿（英文）, 2019,20(12):1706-1716.

Mo CHEN, Xue REN, Hua-gan WU, et al. Periodically varied initial offset boosting behaviors in a memristive system with cosine memductance[J]. Frontiers of Information Technology & Electronic Engineering, 2019, 20(12): 1706-1716.
陈墨, 任雪, 武花干, 等. 余弦忆导忆阻系统周期变化初值位移调控行为[J]. 信息与电子工程前沿（英文）, 2019,20(12):1706-1716. DOI： 10.1631/FITEE.1900360.

Mo CHEN, Xue REN, Hua-gan WU, et al. Periodically varied initial offset boosting behaviors in a memristive system with cosine memductance[J]. Frontiers of Information Technology & Electronic Engineering, 2019, 20(12): 1706-1716. DOI： 10.1631/FITEE.1900360.

摘要

利用一种新型余弦忆导理想忆阻，构造一个四维忆阻系统。由于忆导函数特殊的非线性，忆阻系统具有沿忆阻内部状态变量坐标轴分布的线平衡点集(0

)，且平衡点集稳定性随

变化而周期性演化。数值仿真揭示了忆阻系统非线性、一维的初值位移调控行为，它不仅可由忆阻状态初值触发，也可由其他两个系统状态初值引发。特别地，在位移调控路线上，可以观测到多种具有不同位置和拓扑结构的共存吸引子。通过PSIM电路仿真对该特殊动力学特性进行了验证。

Abstract

A four-dimensional memristive system is constructed using a novel ideal memristor with cosine memductance. Due to the special memductance nonlinearity

this memristive system has a line equilibrium set (0

) located along the coordinate of the inner state variable of the memristor

whose stability is periodically varied with a change of

. Nonlinear and one-dimensional initial offset boosting behaviors

which are triggered by not only the initial condition of the memristor but also other two initial conditions

are numerically uncovered. Specifically

a wide variety of coexisting attractors with different positions and topological structures are revealed along the boosting route. Finally

circuit simulations are performed by Power SIMulation (PSIM) to confirm the unique dynamical features.

关键词

Keywords

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