氧化锆量子点用于非易失性电阻式随机存取存储器

何相磊; 唐睿婕; 杨峰; Mayameen S. KADHIM; 王洁欣; 蒲源; 王丹

doi:10.1631/FITEE.1900363

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氧化锆量子点用于非易失性电阻式随机存取存储器

常规文章 | Updated：2022-05-19

- 氧化锆量子点用于非易失性电阻式随机存取存储器
- Zirconia quantum dots for a nonvolatile resistive random access memory device
- 信息与电子工程前沿（英文） 2019年20卷第12期页码：1698-1705
- Affiliations：
  
  State Key Laboratory of Organic-Inorganic Composites, Beijing University of Chemical Technology, Beijing 100029, China
  MOE Key Laboratory of Advanced Technology of Materials, School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu 610031, China
- Author bio：
  
  [ "", "Xiang-lei HE received his BS degree in 2016 from Beijing University of Chemical Technology (BUCT), in Beijing, China,. He is currently a PhD candidate at the State Key Laboratory of Organic-Inorganic Composites of BUCT. His current research focuses on high-gravity-assisted scalable synthesis of functional nanomaterials for high-performance optical devices" ]
  [ "", "Feng YANG is an associate professor of the Superconductivity and New Energy R & D Center at Southwest Jiaotong University, Chengdu, China. He received his PhD degree in materials science and engineering from Zhejiang University, Hangzhou, China, in 2008. His research interest includes photoelectric nanomaterials, photocatalytic nanomaterials, two-dimensional materials, solar cells, and memristors" ]
  [ "", "Dan WANG is a professor at the State Key Laboratory of Organic-Inorganic Composites of BUCT in Beijing, China. He received his BS degree in materials science and engineering in 2008 and his PhD degree in optical engineering in 2013, both from Zhejiang University, Hangzhou, China. He was a visiting scholar at Hannam University in the Republic of Korea in 2008-2009, Case Western Reserve University in 2013–2015, and Harvard University in the United States in 2019. His research interest focuses on process intensification in chemical engineering and optical nanomaterials. Dr. Wang serves as an associate editor of Applied Nanoscience, an editorial board member of Transactions of Tianjin University, a corresponding expert of Engineering and Frontiers of Information Technology & Electronic Engineering, a youth editorial committee member of Chinese Journal of Chemical Engineering, a member of international cooperation committee at Chemical Industry and Engineering Society of China (CIESC), and a senior member of American Institute of Chemical Engineers (AIChE)" ]
- Funds：
  
  Project supported by the National Natural Science Foundation of China (No. 21808009) and the Beijing Natural Science Foundation, China (No. 2182051)
- DOI：10.1631/FITEE.1900363
  中图分类号： TN386.1
- 收稿：2019-07-19，
  
  修回：2019-12-12，
  
  纸质出版：2019-12
- Accepted：
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何相磊, 唐睿婕, 杨峰, 等. 氧化锆量子点用于非易失性电阻式随机存取存储器[J]. 信息与电子工程前沿（英文）, 2019,20(12):1698-1705.

Xiang-lei HE, Rui-jie TANG, Feng YANG, et al. Zirconia quantum dots for a nonvolatile resistive random access memory device[J]. Frontiers of Information Technology & Electronic Engineering, 2019, 20(12): 1698-1705.
何相磊, 唐睿婕, 杨峰, 等. 氧化锆量子点用于非易失性电阻式随机存取存储器[J]. 信息与电子工程前沿（英文）, 2019,20(12):1698-1705. DOI： 10.1631/FITEE.1900363.

Xiang-lei HE, Rui-jie TANG, Feng YANG, et al. Zirconia quantum dots for a nonvolatile resistive random access memory device[J]. Frontiers of Information Technology & Electronic Engineering, 2019, 20(12): 1698-1705. DOI： 10.1631/FITEE.1900363.

摘要

提出一种利用氧化锆量子点作为有源层的非易失性电阻式随机存取器。通过旋涂法制备Ag(上)/ZrO

(有源层)/Ti(下)典型的三明治结构存储器件。该优化器件具有较高高/低电阻差（约10Ω），良好循环性能（循环数大于100），较低转化电流（约1 μA）。通过原子力显微镜和扫描电子显微镜观察ZrO

有源层表面形貌和堆积状态。实验结果表明，ZrO

有源层紧密堆积，且由于ZrO

量子点分布均匀，ZrO

有源层粗糙度较低（Ra=4.49 nm）。分析了Ag/ZrO

/Ti器件导电机理，并研究银离子导电丝和氧空位对电阻开关记忆行为的影响。该研究为忆阻器材料开发提供了一种简单方案。

Abstract

We propose a nonvolatile resistive random access memory device by employing nanodispersion of zirconia (ZrO

) quantum dots (QDs) for the formation of an active layer. The memory devices comprising a typical sandwich structure of Ag (top)/ ZrO

(active layer)/Ti (bottom) are fabricated using a facile spin-coating method. The optimized device exhibits a high resistance state/low resistance state resistance difference (about 10 Ω)

a good cycle performance (the number of cycles larger than 100)

and a relatively low conversion current (about 1 μA). Atomic force microscopy and scanning electron microscope are used to observe the surface morphology and stacking state of the ZrO

active layer. Experimental results show that the ZrO

active layer is stacked compactly and has a low roughness (Ra=4.49 nm) due to the uniform distribution of the ZrO

QDs. The conductive mechanism of the Ag/ZrO

/Ti device is analyzed and studied

and the conductive filaments of Ag ions and oxygen vacancies are focused on to clarify the resistive switching memory behavior. This study offers a facile approach of memristors for future electronic applications.

关键词

Keywords

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