用于超导纳米线单光子探测器的宽带超低温放大器

李连鸣; 何龙; 吴旭; 牛晓康; 万超; 康琳; 贾小氢; 张蜡宝; 赵清源; 涂学凑

doi:10.1631/FITEE.2100525

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用于超导纳米线单光子探测器的宽带超低温放大器

常规文章 | Updated：2022-06-14

- 用于超导纳米线单光子探测器的宽带超低温放大器
  Enhanced Publication
- Wideband cryogenic amplifier for a superconductingnanowire single-photon detector
- 信息与电子工程前沿（英文） 2021年22卷第12期页码：1666-1676
- Affiliations：
  
  1.National Mobile Communications Research Laboratory, Department of Radio Engineering, School of Information Science and Engineering, Southeast University, Nanjing210096, China
  2.Purple Mountain Laboratories, Nanjing211111, China
  3.Research Institute of Superconductor Electronics, School of Electronic Science and Engineering, Nanjing University, Nanjing210093, China
- Author bio：
  
  ‡Corresponding author
- Funds：
  
  National Key R&D Program of China(2018YFE0205900);National Science and Technology Major Project of China(2018ZX03001008);Natural Science Foundation of Jiangsu Province, China(BK20180368)
- DOI：10.1631/FITEE.2100525
  中图分类号： TN433
- 纸质出版日期：2021-12-0 ，
  
  收稿日期：2021-11-10，
  
  修回日期：2021-12-07，
  
  录用日期：2021-11-30
- Accepted：
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李连鸣, 何龙, 吴旭, 等. 用于超导纳米线单光子探测器的宽带超低温放大器[J]. 信息与电子工程前沿（英文）, 2021,22(12):1666-1676.

LIANMING LI, LONG HE, XU WU, et al. Wideband cryogenic amplifier for a superconductingnanowire single-photon detector. [J]. Frontiers of information technology & electronic engineering, 2021, 22(12): 1666-1676.
李连鸣, 何龙, 吴旭, 等. 用于超导纳米线单光子探测器的宽带超低温放大器[J]. 信息与电子工程前沿（英文）, 2021,22(12):1666-1676. DOI： 10.1631/FITEE.2100525.

LIANMING LI, LONG HE, XU WU, et al. Wideband cryogenic amplifier for a superconductingnanowire single-photon detector. [J]. Frontiers of information technology & electronic engineering, 2021, 22(12): 1666-1676. DOI： 10.1631/FITEE.2100525.

摘要

为有效读出超导纳米线单光子探测器（SNSPD）输出信号，提出一种基于0.13 μm SiGe BiCMOS工艺的低功耗无电感宽带差分超低温放大器。为解决缺少超低温器件精确模型的问题，结合并联—并联反馈和电容耦合超低温放大器结构，通过详细理论分析和仿真，确定了放大器增益与电路可调设计参数间的关系，提高了设计和优化的灵活性，从而实现所需增益。为实现工作频率范围内端口阻抗平坦特性，采用RC并联补偿结构，有效提高了放大器闭环稳定性，并可抑制放大器过冲问题。给出室温（300 K）和低温（4.2 K）下

参数和瞬态性能测试结果。在良好输入输出阻抗匹配下，该放大器在300 K温度下3 dB带宽为1.13 GHz，增益为21 dB。在4.2 K温度下，该放大器增益可在15～24 dB范围内调节，其3 dB带宽为120 kHz～1.3 GHz，功耗仅3.1 mW。去除芯片外围焊盘，该超低温放大器芯片核心面积仅为0.073 mm

。

Abstract

We present a low-power inductorless wideband differential cryogenic amplifier using a 0.13-μm SiGe BiCMOS process for a superconducting nanowire single-photon detector (SNSPD). With a shunt–shunt feedback and capacitive coupling structure

theoretical analysis and simulations were undertaken

highlighting the relationship of the amplifier gain with the tunable design parameters of the circuit. In this way

the design and optimization flexibility can be increased

and a required gain can be achieved even without an accurate cryogenic device model. To realize a flat terminal impedance over the frequency of interest

an RC shunt compensation structure was employed

improving the amplifier’s closed-loop stability and suppressing the amplifier overshoot. The S-parameters and transient performance were measured at room temperature (300 K) and cryogenic temperature (4.2 K). With good input and output matching

the measurement results showed that the amplifier achieved a 21-dB gain with a 3-dB bandwidth of 1.13 GHz at 300 K. At 4.2 K

the gain of the amplifier can be tuned from 15 to 24 dB

achieving a 3-dB bandwidth spanning from 120 kHz to 1.3 GHz and consuming only 3.1 mW. Excluding the chip pads

the amplifier chip core area was only about 0.073 mm

关键词

超低温放大器宽带放大器超导纳米线单光子探测器

Keywords

Cryogenic amplifierWideband amplifierSuperconducting nanowire single-photon detector (SNSPD)

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