基于半导体纳米晶体的神经突触器件

步明轩; 王越; 尹蕾; 童周禹; 张懿强; 杨德仁; 皮孝东

doi:10.1631/FITEE.2100551

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基于半导体纳米晶体的神经突触器件

常规文章 | Updated：2023-01-11

- 基于半导体纳米晶体的神经突触器件
  Cover Article
- Synaptic devices based on semiconductor nanocrystals
- 信息与电子工程前沿(英文版) 2022年23卷第11期页码：1579-1601
- Affiliations：
  
  1.State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China
  2.School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
  3.School of Material Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
  4.Institute of Advanced Semiconductors, Hangzhou Innovation Center, Zhejiang University, Hangzhou 311200, China
  5.Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Innovation Center, Zhejiang University, Hangzhou 311200, China
- Author bio：
  
  [ "Mingxuan BU, first author of this invited paper, received his BS degree in the School of Materials Science and Engineering at Zhejiang University in 2021. He is now pursuing his MS degree at the State Key Laboratory of Silicon Materials at Zhejiang University. He is currently investigating optoelectronic synaptic devices based on semiconductor nanocrystals." ]
  [ "Xiaodong PI, corresponding author of this invited paper, received his PhD degree at the University of Bath in 2004. He then carried out research at McMaster University and the University of Minnesota at Twin Cities. He joined Zhejiang University as an associate professor in 2008. He is now a professor at the State Key Laboratory of Silicon Materials, School of Materials Science and Engineering and Hangzhou Innovation Center at Zhejiang University. Prof. PI is a corresponding expert of Front Inform Technol Electron Eng. His research interest concerns mainly group IV semiconductor materials and devices." ]
- Funds：
  
  the National Key Research and Development Program of China(2018YFB2200101);the National Natural Science Foundation of China(91964107;U20A20209;61721005)
- DOI：10.1631/FITEE.2100551
  中图分类号： Q811; TN303
- 收稿：2021-11-29，
  
  修回：2022-04-24，
  
  网络出版：2022-09-09，
  
  纸质出版：2022-11-0
- Accepted：
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步明轩, 王越, 尹蕾, 等. 基于半导体纳米晶体的神经突触器件[J]. 信息与电子工程前沿(英文版), 2022,23(11):1579-1601.

Mingxuan BU, Yue WANG, Lei YIN, et al. Synaptic devices based on semiconductor nanocrystals[J]. Frontiers of Information Technology & Electronic Engineering, 2022, 23(11): 1579-1601.
步明轩, 王越, 尹蕾, 等. 基于半导体纳米晶体的神经突触器件[J]. 信息与电子工程前沿(英文版), 2022,23(11):1579-1601. DOI： 10.1631/FITEE.2100551.

Mingxuan BU, Yue WANG, Lei YIN, et al. Synaptic devices based on semiconductor nanocrystals[J]. Frontiers of Information Technology & Electronic Engineering, 2022, 23(11): 1579-1601. DOI： 10.1631/FITEE.2100551.

摘要

近年来，人们对信息处理的需求日益增长，脑启发式神经形态器件得到了广泛的关注。突触器件作为一类重要的神经形态器件，在短短几年内迅速升温。在用于制备突触器件的各种材料中，半导体纳米晶体（NCs）因其优异的电学和光学性能而成为首选材料之一。本综述论文首先介绍了基于半导体纳米晶体的突触器件的研究背景及半导体纳米晶体的基本性质。然后，根据器件有源层所用纳米晶体种类的不同，分类介绍了基于纳米晶体的突触器件的最新研究进展。最后，讨论了基于半导体纳米晶体的突触器件目前仍面临的问题和挑战。

Abstract

To meet a growing demand for information processing

brain-inspired neuromorphic devices have been intensively studied in recent years. As an important type of neuromorphic device

synaptic devices have attracted strong attention. Among all the kinds of materials explored for the fabrication of synaptic devices

semiconductor nanocrystals (NCs) have become one of the preferred choices due to their excellent electronic and optical properties. In this review

we first introduce the research background of synaptic devices based on semiconductor NCs and briefly present the basic properties of semiconductor NCs. Recent developments in the field of synaptic devices based on semiconductor NCs are then discussed according to the materials employed in the active layers of the devices. Finally

we discuss existing problems and challenges of synaptic devices based on semiconductor NCs.

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