Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias

Yong DING; Xiao-hua LUO; Xiao-lang YAN

doi:10.1631/jzus.C1000312

Your Location：

Home >

Browse articles >

Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias

电子工程 | Updated：2022-08-31

- Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias
- Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias
- 信息与电子工程前沿（英文） 2011年12卷第7期页码：597-603
- Affiliations：
  
  Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China
- Author bio：
  
  E-mail:dingy@vlsi.zju.edu.cn
  ‡Corresponding Author
- Funds：
- DOI：10.1631/jzus.C1000312
  中图分类号：
- 收稿：2010-09-09，
  
  修回：2011-05-31，
  
  录用：2011-01-10，
  
  纸质出版：2011-07
- Accepted：
Scan QR Code
Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias[J]. 信息与电子工程前沿（英文）, 2011,12(7):597-603.

Yong DING, Xiao-hua LUO, Xiao-lang YAN. Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias[J]. Frontiers of Information Technology & Electronic Engineering, 2011, 12(7): 597-603.
Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias[J]. 信息与电子工程前沿（英文）, 2011,12(7):597-603. DOI： 10.1631/jzus.C1000312.

Yong DING, Xiao-hua LUO, Xiao-lang YAN. Current oscillations and low-frequency noises in GaAs MESFET channels with sidegating bias[J]. Frontiers of Information Technology & Electronic Engineering, 2011, 12(7): 597-603. DOI： 10.1631/jzus.C1000312.

摘要

Abstract

Low-frequency noises (LFN) and noise-like oscillations (NLO) in GaAs metal semiconductor field effect transistor (MESFET) channel current were investigated under sidegating bias conditions. It was found that the fluctuations of the channel current were directly dependent upon the sidegating bias. As the sidegating bias decreased

the amplitudes of the oscillations would increase correspondingly. Furthermore

the LFN and NLO would attenuate sharply when the sidegating bias increased to more than a certain voltage. Two mechanisms are presented to demonstrate that the effective substrate resistivity or the channel-substrate junction modulated by sidegating bias and deep level traps would take responsibilities for the LFN and NLO.

关键词

Keywords

references

浏览量

Downloads

CSCD

文章被引用时，请邮件提醒。

Submit

工具集

关联资源

暂无数据