A gain-flatness optimization solution for feedback technology of wideband low noise amplifiers

Zhen-hua LI; Bang-hong GUO; Zheng-jun WEI; Song-hao LIU; Nan CHENG; Jin-dong WANG; Jian-jun GUO; Long YAN

doi:10.1631/jzus.C1010300

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A gain-flatness optimization solution for feedback technology of wideband low noise amplifiers

电子工程 | Updated：2022-08-31

- A gain-flatness optimization solution for feedback technology of wideband low noise amplifiers
- A gain-flatness optimization solution for feedback technology of wideband low noise amplifiers
- 信息与电子工程前沿（英文） 2011年12卷第7期页码：608-613
- Affiliations：
  
  Key Laboratory of Photonic Information Technology of Guangdong Higher Education Institutes, SIPSE & LQIT, South China Normal University, Guangzhou 510006, China
- Author bio：
  
  ‡Corresponding Author
- Funds：
- DOI：10.1631/jzus.C1010300
  中图分类号：
- 收稿：2010-06-28，
  
  修回：2011-05-31，
  
  录用：2010-11-05，
  
  纸质出版：2011-07
- Accepted：
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A gain-flatness optimization solution for feedback technology of wideband low noise amplifiers[J]. 信息与电子工程前沿（英文）, 2011,12(7):608-613.

Zhen-hua LI, Bang-hong GUO, Zheng-jun WEI, et al. A gain-flatness optimization solution for feedback technology of wideband low noise amplifiers[J]. Frontiers of Information Technology & Electronic Engineering, 2011, 12(7): 608-613.
A gain-flatness optimization solution for feedback technology of wideband low noise amplifiers[J]. 信息与电子工程前沿（英文）, 2011,12(7):608-613. DOI： 10.1631/jzus.C1010300.

Zhen-hua LI, Bang-hong GUO, Zheng-jun WEI, et al. A gain-flatness optimization solution for feedback technology of wideband low noise amplifiers[J]. Frontiers of Information Technology & Electronic Engineering, 2011, 12(7): 608-613. DOI： 10.1631/jzus.C1010300.

摘要

Abstract

The

parameter expression of high-frequency models of the high electron mobility transistors (HEMTs) with basic feedback structure

especially the transmission gain

is presented and analyzed. In addition

an improved feedback structure and its theory are proposed and demonstrated

in order to obtain a better gain-flatness through the mutual interaction between the series inductor and the parallel capacitor in the feedback loop. The optimization solution for the feedback amplifier can eliminate the negative impacts on transmission gain

caused by things such as resonance peaks. Furthermore

our theory covers the shortage of conventional feedback amplifiers

to some extent. A wideband low-noise amplifier (LNA) with the improved feedback technology is designed based on HEMT. The transmission gain is about 20 dB with the gain variation of 1.2 dB from 100 MHz to 6 GHz. The noise figure is lower than 2.8 dB in the whole band and the amplifier is unconditionally stable.

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