An accurate analytical <italic style="font-style: italic">I</italic>-<italic style="font-style: italic">V</italic> model for sub-90-nm MOSFETs and its application to read static noise margin modeling

Behrouz AFZAL; Behzad EBRAHIMI; Ali AFZALI-KUSHA; Massoud PEDRAM

doi:10.1631/jzus.C1100090

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An accurate analytical I-V model for sub-90-nm MOSFETs and its application to read static noise margin modeling

电子工程 | Updated：2022-12-09

- An accurate analytical I-V model for sub-90-nm MOSFETs and its application to read static noise margin modeling
- An accurate analytical I-V model for sub-90-nm MOSFETs and its application to read static noise margin modeling
- 信息与电子工程前沿（英文） 2012年13卷第1期页码：58-70
- Affiliations：
  
  1.School of Electrical and Computer Engineering, University of Tehran, Tehran, Iran
  2.Department of Electrical Engineering, University of Southern California, Los Angeles, CA, USA
- Author bio：
  
  [ "Ali AFZALI-KUSHA, E-mail: afzali@ut.ac.ir" ]
- Funds：
- DOI：10.1631/jzus.C1100090
  中图分类号： TN386.1
- 收稿：2011-04-07，
  
  修回：2011-12-;8，
  
  纸质出版：2012-01
- Accepted：
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An accurate analytical I-V model for sub-90-nm MOSFETs and its application to read static noise margin modeling[J]. 信息与电子工程前沿（英文）, 2012,13(1):58-70.

Behrouz AFZAL, Behzad EBRAHIMI, Ali AFZALI-KUSHA, et al. An accurate analytical I-V model for sub-90-nm MOSFETs and its application to read static noise margin modeling[J]. Frontiers of Information Technology & Electronic Engineering, 2012, 13(1): 58-70.
An accurate analytical I-V model for sub-90-nm MOSFETs and its application to read static noise margin modeling[J]. 信息与电子工程前沿（英文）, 2012,13(1):58-70. DOI： 10.1631/jzus.C1100090.

Behrouz AFZAL, Behzad EBRAHIMI, Ali AFZALI-KUSHA, et al. An accurate analytical I-V model for sub-90-nm MOSFETs and its application to read static noise margin modeling[J]. Frontiers of Information Technology & Electronic Engineering, 2012, 13(1): 58-70. DOI： 10.1631/jzus.C1100090.

摘要

Abstract

We propose an accurate model to describe the

characteristics of a sub-90-nm metal–oxide–semiconductor field-effect transistor (MOSFET) in the linear and saturation regions for fast analytical calculation of the current. The model is based on the BSIM3v3 model. Instead of using constant threshold voltage and early voltage

as is assumed in the BSIM3v3 model

we define these voltages as functions of the gate-source voltage. The accuracy of the model is verified by comparison with HSPICE for the 90-

65-

45-

and 32-nm CMOS technologies. The model shows better accuracy than the

th-power and BSIM3v3 models. Then

we use the proposed

model to calculate the read static noise margin (SNM) of nano-scale conventional 6T static random-access memory (SRAM) cells with high accuracy. We calculate the read SNM by approximating the inverter transfer voltage characteristic of the cell in the regions where vertices of the maximum square of the butterfly curves are placed. The results for the SNM are also in excellent agreement with those of the HSPICE simulation for 90-

65-

45-

and 32-nm technologies. Verification in the presence of process variations and negative bias temperature instability (NBTI) shows that the model can accurately predict the minimum supply voltage required for a target yield.

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references

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An accurate analytical I-V model for sub-90-nm MOSFETs and its application to read static noise margin modeling

An accurate analytical I-V model for sub-90-nm MOSFETs and its application to read static noise margin modeling

DOI：10.1631/jzus.C1100090

摘要

Abstract

关键词

Keywords

references