Design of MMIC oscillators using GaAs 0.2 μm PHEMT technology

Neda KAZEMY NAJAFABADI; Sare NEMATI; Massoud DOUSTI

doi:10.1631/jzus.C1200013

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Design of MMIC oscillators using GaAs 0.2 μm PHEMT technology

电子工程 | Updated：2022-12-09

- Design of MMIC oscillators using GaAs 0.2 μm PHEMT technology
- Design of MMIC oscillators using GaAs 0.2 μm PHEMT technology
- 信息与电子工程前沿（英文） 2012年13卷第10期页码：793-798
- Affiliations：
  
  1.Department of Electrical Engineering, Arak Branch, Islamic Azad University, Arak, Iran
  2.Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran
- Author bio：
  
  [ "Neda KAZEMY NAJAFABADI, E-mail: kazemy86@yahoo.com" ]
  [ "Massoud DOUSTI, E-mail: m_dousti@srbiau.ac.ir" ]
- Funds：
- DOI：10.1631/jzus.C1200013
  中图分类号： TN752.5
- 收稿：2012-01-16，
  
  修回：2012-;9-11，
  
  纸质出版：2012-10
- Accepted：
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Design of MMIC oscillators using GaAs 0.2 μm PHEMT technology[J]. 信息与电子工程前沿（英文）, 2012,13(10):793-798.

Neda KAZEMY NAJAFABADI, Sare NEMATI, Massoud DOUSTI. Design of MMIC oscillators using GaAs 0.2 μm PHEMT technology[J]. Frontiers of Information Technology & Electronic Engineering, 2012, 13(10): 793-798.
Design of MMIC oscillators using GaAs 0.2 μm PHEMT technology[J]. 信息与电子工程前沿（英文）, 2012,13(10):793-798. DOI： 10.1631/jzus.C1200013.

Neda KAZEMY NAJAFABADI, Sare NEMATI, Massoud DOUSTI. Design of MMIC oscillators using GaAs 0.2 μm PHEMT technology[J]. Frontiers of Information Technology & Electronic Engineering, 2012, 13(10): 793-798. DOI： 10.1631/jzus.C1200013.

摘要

Abstract

We propose a feedback type oscillator and two negative resistance oscillators. These microwave oscillators have been designed in the S band frequency. A relatively symmetric resonator is used in the feedback type oscillator. The first negative resistance oscillator uses a simple lumped element resonator which is substituted by a microstrip resonator in the second oscillator to improve results. The negative resistance oscillator produces 4.207 dBm and 7.124 dBm output power with the lumped element resonator and microstrip resonator respectively

and the feedback type oscillator produces -10.707 dBm output power. The feedback type oscillator operates at 3 GHz with phase noise levels at -83.30 dBc/Hz and -103.3 dBc/Hz at 100 kHz and 1 MHz offset frequencies respectively. The phase noise levels of the negative resistance oscillator with the lumped element resonator are -94.64 dBc/Hz and -116 dBc/Hz at 100 kHz and 1 MHz offset frequencies respectively

at an oscillation frequency of 3.053 GHz. With the microstrip resonator the phase noise levels are -99.49 dBc/Hz and -119.641 dBc/Hz at 100 kHz and 1 MHz offset frequencies respectively

at an oscillation frequency of 3.072 GHz. The results showed that both the output power and the phase noise of the negative resistance oscillators were better than those of the feedback type oscillator.

关键词

Keywords

references

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