A low drift current reference based on PMOS temperature correction technology

Yi-die YE; Le-nian HE; Ya-dan SHEN

doi:10.1631/jzus.C1200112

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A low drift current reference based on PMOS temperature correction technology

电子工程 | Updated：2022-05-19

- A low drift current reference based on PMOS temperature correction technology
- A low drift current reference based on PMOS temperature correction technology
- 信息与电子工程前沿（英文） 2012年13卷第12期页码：937-943
- Affiliations：
  
  Institute of Very Large Scale Integrated Circuits Design, Zhejiang University, Hangzhou 310027, China
- Author bio：
  
  [ "Yi-die YE, E-mail: yeyidie@nbu.edu.cn" ]
  Le-nian HE, E-mail:helenian@vlsi.zju.edu.cn
- Funds：
- DOI：10.1631/jzus.C1200112
  中图分类号： TN432
- 收稿：2012-04-15，
  
  修回：2012-10-22，
  
  纸质出版：2012-12
- Accepted：
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A low drift current reference based on PMOS temperature correction technology[J]. 信息与电子工程前沿（英文）, 2012,13(12):937-943.

Yi-die YE, Le-nian HE, Ya-dan SHEN. A low drift current reference based on PMOS temperature correction technology[J]. Frontiers of Information Technology & Electronic Engineering, 2012, 13(12): 937-943.
A low drift current reference based on PMOS temperature correction technology[J]. 信息与电子工程前沿（英文）, 2012,13(12):937-943. DOI： 10.1631/jzus.C1200112.

Yi-die YE, Le-nian HE, Ya-dan SHEN. A low drift current reference based on PMOS temperature correction technology[J]. Frontiers of Information Technology & Electronic Engineering, 2012, 13(12): 937-943. DOI： 10.1631/jzus.C1200112.

摘要

Abstract

A low drift current reference based on PMOS temperature correction technology is proposed. To achieve the mini mum temperature coefficient (TC)

the PMOS cascode current mirror is designed as a cross structure. By exchanging the bias for two layers of the self-biased PMOS cascode structure

the upper PMOS

which is used to adjust the TC together with the resistor of the self-biased PMOS cascode structure

is forced to work in the linear region. As the proposed current reference is the on-chip current reference of a high voltage LED driver with high accuracy

it was designed using a CSMC 1 μm 40 V BCD process. Simulation shows that the TC of the reference current was only 23.8×10

-6

/℃ over the temperature range of -40–120 ℃ under the typical condition.

关键词

Keywords

references

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