An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator

Li-heng LOU; Ling-ling SUN; Jun LIU; Hai-jun GAO

doi:10.1631/jzus.C1200268

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An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator

电气与电子工程 | Updated：2022-05-19

- An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator
- An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator
- 信息与电子工程前沿（英文） 2013年14卷第3期页码：205-213
- Affiliations：
  
  1.Institute of VLSI Design, Zhejiang University, Hangzhou 310027, China
  2.MOE Key Laboratory of RF Circuits and Systems, Hangzhou Dianzi University, Hangzhou 310018, China
- Author bio：
  
  [ "Li-heng LOU, E-mail: lynn_lo@163.com" ]
  Ling-ling SUN, E-mail: sunll@hdu.edu.cn
- Funds：
  
  Project supported by the National Basic Research Program (973) of China (No.2010CB327403) and the National Natural Science Foundation of China (Nos.61001066 and 61102027)
- DOI：10.1631/jzus.C1200268
  中图分类号： TN432
- 收稿：2012-09-21，
  
  修回：2013-;2-25，
  
  纸质出版：2013-03
- Accepted：
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An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator[J]. 信息与电子工程前沿（英文）, 2013,14(3):205-213.

Li-heng LOU, Ling-ling SUN, Jun LIU, et al. An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator[J]. Frontiers of Information Technology & Electronic Engineering, 2013, 14(3): 205-213.
An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator[J]. 信息与电子工程前沿（英文）, 2013,14(3):205-213. DOI： 10.1631/jzus.C1200268.

Li-heng LOU, Ling-ling SUN, Jun LIU, et al. An efficient PSP-based model for optimized cross-coupled MOSFETs in voltage controlled oscillator[J]. Frontiers of Information Technology & Electronic Engineering, 2013, 14(3): 205-213. DOI： 10.1631/jzus.C1200268.

摘要

Abstract

This paper proposes an efficient PSP-based model for cross-coupled metal-oxide-semiconductor field-effect transistors (MOSFETs) with optimized layout in the voltage controlled oscillator (VCO). The model employs a PSP charge model to characterize the bias-dependent extrinsic capacitance instead of numerical functions with strong non-linearity. The simulation convergence is greatly improved by this method. An original scheme is developed to extract the parameters of the PSP charge model based on

-parameters measurement. The interconnection parasitics of the cross-coupled MOSFETs are modeled based on vector fitting. The model is verified with an LC VCO design

and exhibits excellent convergence during simulation. The results show improvements as high as 60.5% and 61.8% in simulation efficiency and accuracy

respectively

indicating that the proposed model better characterizes optimized cross-coupled MOSFETs in advanced radio frequency (RF) circuit design.

关键词

Keywords

references

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