Ka-band ultra low voltage miniature sub-harmonic resistive mixer with a new broadside coupled Marchand balun in 0.18-μm CMOS technology

Ge-liang YANG; Zhi-gong WANG; Zhi-qun LI; Qin LI; Fa-en LIU; Zhu LI

doi:10.1631/jzus.C1200369

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Ka-band ultra low voltage miniature sub-harmonic resistive mixer with a new broadside coupled Marchand balun in 0.18-μm CMOS technology

电气与电子工程 | Updated：2022-12-09

- Ka-band ultra low voltage miniature sub-harmonic resistive mixer with a new broadside coupled Marchand balun in 0.18-μm CMOS technology
- Ka-band ultra low voltage miniature sub-harmonic resistive mixer with a new broadside coupled Marchand balun in 0.18-μm CMOS technology
- 信息与电子工程前沿（英文） 2013年14卷第4期页码：288-295
- Affiliations：
  
  Engineering Research Center of RF-ICs and RF-Systems, Ministry of Education, Southeast University, Nanjing 210096, China
- Author bio：
  
  [ "YANG Ge-liang, E-mail: yglamen@gmail.com" ]
  WANG Zhi-gong, zgwang@seu.edu.cn
- Funds：
  
  Project supported by the National Basic Research Program (973) of China (No. 2010CB327404), the National High-Tech R & D Program (863) of China (No. 2011AA10305), and the National Natural Science Foundation of China (No. 60901012)
- DOI：10.1631/jzus.C1200369
  中图分类号： TN4
- 收稿：2012-12-22，
  
  修回：2013-;3-23，
  
  纸质出版：2013-04
- Accepted：
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Ka-band ultra low voltage miniature sub-harmonic resistive mixer with a new broadside coupled Marchand balun in 0.18-μm CMOS technology[J]. 信息与电子工程前沿（英文）, 2013,14(4):288-295.

Ge-liang YANG, Zhi-gong WANG, Zhi-qun LI, et al. Ka-band ultra low voltage miniature sub-harmonic resistive mixer with a new broadside coupled Marchand balun in 0.18-μm CMOS technology[J]. Frontiers of Information Technology & Electronic Engineering, 2013, 14(4): 288-295.
Ka-band ultra low voltage miniature sub-harmonic resistive mixer with a new broadside coupled Marchand balun in 0.18-μm CMOS technology[J]. 信息与电子工程前沿（英文）, 2013,14(4):288-295. DOI： 10.1631/jzus.C1200369.

Ge-liang YANG, Zhi-gong WANG, Zhi-qun LI, et al. Ka-band ultra low voltage miniature sub-harmonic resistive mixer with a new broadside coupled Marchand balun in 0.18-μm CMOS technology[J]. Frontiers of Information Technology & Electronic Engineering, 2013, 14(4): 288-295. DOI： 10.1631/jzus.C1200369.

摘要

Abstract

A Ka-band sub-harmonically pumped resistive mixer (SHPRM) was designed and fabricated using the standard 0.18-μm complementary metal-oxide-semiconductor (CMOS) technology. An area-effective asymmetric broadside coupled spiral Marchand balance-to-unbalance (balun) with magnitude and phase imbalance compensation is used in the mixer to transform local oscillation (LO) signal from single to differential mode. The results showed that the SHPRM achieves the conversion gain of -15–-12.5 dB at fixed

=0.5 GHz with 8 dBm LO input power for the radio frequency (RF) bandwidth of 28–35 GHz. The in-band LO-intermediate freqency (IF)

RF-IF

and LO-RF isolations are better than 31

and 36 dB

respectively. Besides

the 2LO-IF and 2LO-RF isolations are better than 60 and 45 dB

respectively. The measured input referred P1dB and 3rd-order inter-modulation intercept point (IIP3) are 0.5 and 10.5 dBm

respectively. The measurement is performed under a gate bias voltage as low as 0.1 V and the whole chip only occupies an area of 0.33 mm

including pads.

关键词

Keywords

references

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