High <italic style="font-style: italic">Q</italic>, high frequency, high overtone bulk acoustic resonator with ZnO films

Meng-wei LIU; Ming-bo ZHU; Jun-hong LI; Cheng-hao WANG

doi:10.1631/jzus.C12MNT07

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High Q, high frequency, high overtone bulk acoustic resonator with ZnO films

中国微纳技术学会专题，CSMNT2012 | Updated：2022-12-09

- High Q, high frequency, high overtone bulk acoustic resonator with ZnO films
- High Q, high frequency, high overtone bulk acoustic resonator with ZnO films
- 信息与电子工程前沿（英文） 2013年14卷第4期页码：279-282
- Affiliations：
  
  State Key Laboratory of Acoustics, Institute of Acoustics, Chinese Academy of Sciences, Beijing 100190, China
- Author bio：
  
  [ "LIU Meng-wei, E-mail: liumw@mail.ioa.ac.cn" ]
- Funds：
  
  Project (Nos. 11074274 and 11174319) supported by the National Natural Science Foundation of China
- DOI：10.1631/jzus.C12MNT07
  中图分类号： TN751
- 收稿：2012-09-27，
  
  修回：2013-;3-22，
  
  纸质出版：2013-04
- Accepted：
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High Q, high frequency, high overtone bulk acoustic resonator with ZnO films[J]. 信息与电子工程前沿（英文）, 2013,14(4):279-282.

Meng-wei LIU, Ming-bo ZHU, Jun-hong LI, et al. High Q, high frequency, high overtone bulk acoustic resonator with ZnO films[J]. Frontiers of Information Technology & Electronic Engineering, 2013, 14(4): 279-282.
High Q, high frequency, high overtone bulk acoustic resonator with ZnO films[J]. 信息与电子工程前沿（英文）, 2013,14(4):279-282. DOI： 10.1631/jzus.C12MNT07.

Meng-wei LIU, Ming-bo ZHU, Jun-hong LI, et al. High Q, high frequency, high overtone bulk acoustic resonator with ZnO films[J]. Frontiers of Information Technology & Electronic Engineering, 2013, 14(4): 279-282. DOI： 10.1631/jzus.C12MNT07.

摘要

Abstract

Bulk acoustic wave resonators with piezoelectric films have been widely explored for the small size and high quality factor (

) at GHz. This paper describes a high overtone bulk acoustic resonator (HBAR) based on Al/ZnO/Al sandwich layers and

-axis sapphire substrate. ZnO film with high quality

-axis orientation has been obtained using DC magnetron sputtering. The fabricated HBAR presents high

at the multiple resonances from a 0.5–4.0 GHz wide band with a total size (including the contact pads) of 0.6 mm×0.3 mm×0.4 mm. The device exhibits the best acoustic coupling at around 2.4 GHz

which agrees with the simulation results based on the one-dimensional Mason equivalent circuit model. The HBAR also demonstrates

values of 30 000

25 000

and 6500 at 1.49

2.43

and 3.40 GHz

respectively. It is indicated that the HBAR has potential applications for the low phase noise high frequency oscillator or microwave signal source.

关键词

Keywords

references

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High Q, high frequency, high overtone bulk acoustic resonator with ZnO films

High Q, high frequency, high overtone bulk acoustic resonator with ZnO films

DOI：10.1631/jzus.C12MNT07

摘要

Abstract

关键词

Keywords

references